All Transistors. PDTC114YM Datasheet

 

PDTC114YM Datasheet and Replacement


   Type Designator: PDTC114YM
   SMD Transistor Code: DU
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT883
 

 PDTC114YM Substitution

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PDTC114YM Datasheet (PDF)

 6.1. Size:56K  motorola
 pdtc114yt 3.pdf pdf_icon

PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

 6.2. Size:59K  motorola
 pdtc114yu 1.pdf pdf_icon

PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R

 6.3. Size:56K  motorola
 pdtc114ye 3.pdf pdf_icon

PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

 6.4. Size:174K  philips
 pdtc114y series.pdf pdf_icon

PDTC114YM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC114Y seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Sep 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC114Y seriesR1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

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Datasheet: PDTC114EM , PDTC114ET , PDTC114EU , PDTC114TE , PDTC114TM , PDTC114TT , PDTC114TU , PDTC114YE , S9018 , PDTC114YT , PDTC114YU , PDTC115EE , PDTC115EM , PDTC115ET , PDTC115EU , PDTC115TE , PDTC115TM .

History: 2N461 | MD2905 | UMF21N | 40882 | 2SD389 | 2N200 | BFW32

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