PDTC123JE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTC123JE
Código: 28_5A
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT416
Búsqueda de reemplazo de PDTC123JE
PDTC123JE Datasheet (PDF)
pdtc123je 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33
pdtc123je 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33
pdtc123jef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
pdtc123jef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
Otros transistores... PDTC115TE , PDTC115TM , PDTC115TT , PDTC115TU , PDTC123EE , PDTC123EM , PDTC123ET , PDTC123EU , 2N3904 , PDTC123JM , PDTC123JT , PDTC123JU , PDTC123TE , PDTC123TM , PDTC123TT , PDTC123TU , PDTC123YE .
History: 2SC4266 | 2SB710 | BC315B
History: 2SC4266 | 2SB710 | BC315B
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