All Transistors. PDTC123JE Datasheet

 

PDTC123JE Datasheet and Replacement


   Type Designator: PDTC123JE
   SMD Transistor Code: 28_5A
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT416
 

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PDTC123JE Datasheet (PDF)

 ..1. Size:55K  motorola
 pdtc123je 3.pdf pdf_icon

PDTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 ..2. Size:55K  philips
 pdtc123je 3.pdf pdf_icon

PDTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 0.1. Size:54K  motorola
 pdtc123jef 1.pdf pdf_icon

PDTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 0.2. Size:54K  philips
 pdtc123jef 1.pdf pdf_icon

PDTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

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Datasheet: PDTC115TE , PDTC115TM , PDTC115TT , PDTC115TU , PDTC123EE , PDTC123EM , PDTC123ET , PDTC123EU , 2N3904 , PDTC123JM , PDTC123JT , PDTC123JU , PDTC123TE , PDTC123TM , PDTC123TT , PDTC123TU , PDTC123YE .

History: BFW59 | NJL0281DG | 2SD2016 | KRC116M | NB112FH | RN1962FS

Keywords - PDTC123JE transistor datasheet

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