PDTC124XE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC124XE  📄📄 

Código: 32

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT416

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PDTC124XE datasheet

 ..1. Size:55K  motorola
 pdtc124xe 3.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage

 ..2. Size:55K  philips
 pdtc124xe 3.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage

 0.1. Size:54K  motorola
 pdtc124xef 2.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha

 0.2. Size:54K  philips
 pdtc124xef 2.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha

MOSTRAR MÁS

Otros transistores... PDTC124EE, PDTC124EM, PDTC124ET, PDTC124EU, PDTC124TE, PDTC124TM, PDTC124TT, PDTC124TU, 13003, PDTC124XM, PDTC124XT, PDTC124XU, PDTC143EE, PDTC143EM, PDTC143ET, PDTC143EU, PDTC143TE