All Transistors. PDTC124XE Datasheet

 

PDTC124XE Datasheet and Replacement


   Type Designator: PDTC124XE
   SMD Transistor Code: 32
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT416
 

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PDTC124XE Datasheet (PDF)

 ..1. Size:55K  motorola
 pdtc124xe 3.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

 ..2. Size:55K  philips
 pdtc124xe 3.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

 0.1. Size:54K  motorola
 pdtc124xef 2.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

 0.2. Size:54K  philips
 pdtc124xef 2.pdf pdf_icon

PDTC124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

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Datasheet: PDTC124EE , PDTC124EM , PDTC124ET , PDTC124EU , PDTC124TE , PDTC124TM , PDTC124TT , PDTC124TU , S8050 , PDTC124XM , PDTC124XT , PDTC124XU , PDTC143EE , PDTC143EM , PDTC143ET , PDTC143EU , PDTC143TE .

History: RN1902AFS | JC556B | 2SB706 | 2SD199 | BFW52 | NPS2711 | 2N3634L

Keywords - PDTC124XE transistor datasheet

 PDTC124XE cross reference
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