PDTC143EM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC143EM  📄📄 

Código: E1

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT883

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PDTC143EM datasheet

 6.1. Size:57K  motorola
 pdtc143ek 2.pdf pdf_icon

PDTC143EM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC143EK NPN resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jun 16 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EK FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k each) 3 Simplificati

 6.2. Size:58K  motorola
 pdtc143eu 3.pdf pdf_icon

PDTC143EM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC143EU NPN resistor-equipped transistor 1999 Apr 14 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EU FEATURES Built-in bias resistors R1 and R2 typ. 4.7 k each) 3 handbook, 4 columns Simplification of circuit design

 6.3. Size:56K  motorola
 pdtc143ee 2.pdf pdf_icon

PDTC143EM

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EE FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k each) Simplification of circuit desig

 6.4. Size:58K  motorola
 pdtc143es 2.pdf pdf_icon

PDTC143EM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC143ES NPN resistor-equipped transistor 1998 May 20 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ES FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k each) Simplification

MOSTRAR MÁS

Otros transistores... PDTC124TM, PDTC124TT, PDTC124TU, PDTC124XE, PDTC124XM, PDTC124XT, PDTC124XU, PDTC143EE, A733, PDTC143ET, PDTC143EU, PDTC143TE, PDTC143TM, PDTC143TT, PDTC143TU, PDTC143XE, PDTC143XM