PDTC143EM Datasheet and Replacement
Type Designator: PDTC143EM
SMD Transistor Code: E1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT883
PDTC143EM Datasheet (PDF)
pdtc143ek 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
pdtc143eu 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdtc143ee 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig
pdtc143es 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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