PDTC144EU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC144EU 📄📄

Código: *08_p08_t08_W08

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT323

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PDTC144EU datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144EU NPN resistor-equipped transistor 1999 Apr 16 Objective specification Supersedes data of 1998 May 18 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC144EU FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) 3 handbook, 4 columns Simplification of circuit desi

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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144EEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC144EEF FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) Simplification of circuit design 3 handbook, halfpage 3 R1 Reduces number of components

6.2. Size:58K motorola
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC144ES NPN resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144ES FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) Simplification o