PDTC144WE Todos los transistores

 

PDTC144WE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC144WE
   Código: 42
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT416

 Búsqueda de reemplazo de transistor bipolar PDTC144WE

 

PDTC144WE Datasheet (PDF)

 0.1. Size:139K  nxp
pdtc144wef pdtc144wk pdtc144ws.pdf

PDTC144WE
PDTC144WE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.1. Size:55K  motorola
pdtc144wt 3.pdf

PDTC144WE
PDTC144WE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.2. Size:57K  motorola
pdtc144wu 3.pdf

PDTC144WE
PDTC144WE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.3. Size:55K  philips
pdtc144wt 3.pdf

PDTC144WE
PDTC144WE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.4. Size:57K  philips
pdtc144wu 3.pdf

PDTC144WE
PDTC144WE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.5. Size:183K  philips
pdtc144w series.pdf

PDTC144WE
PDTC144WE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

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