PMBS3904 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMBS3904
Código: pO4_t04_tO4_WO4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar PMBS3904
PMBS3904 Datasheet (PDF)
pmbs3904 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBS3904NPN general purpose transistor1999 Apr 22Product specificationSupersedes data of 1997 May 20Philips Semiconductors Product specificationNPN general purpose transistor PMBS3904FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collect
pmbs3904.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBS3904NPN general purpose transistorProduct data sheet 2004 Feb 02Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheetNPN general purpose transistor PMBS3904FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector General purpose switchin
pmbs3904.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBS3904NPN general purpose transistorProduct data sheet 2004 Feb 02Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheetNPN general purpose transistor PMBS3904FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector General purpose switchin
pmbs3906 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBS3906PNP general purpose transistor1999 Apr 22Product specificationSupersedes data of 1997 May 20Philips Semiconductors Product specificationPNP general purpose transistor PMBS3906FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collect
pmbs3906.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBS3906PNP general purpose transistorProduct data sheet 2004 Feb 02Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheetPNP general purpose transistor PMBS3906FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector General purpose switchin
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: PEMD13
History: PEMD13
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050