2STA1695 Todos los transistores

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new Bi

2STA1837 PNP power bipolar transistor Preliminary data Features High breakdown voltage VCEO = -230 V Complementary to 2STC4793 High transition frequency, typical fT = 70 MHz Applications 3 Audio power amplifier 2 1 Drive stage amplifier TO-220FP Description This device is a PNP transistor manufactured using new PB-HDC (power bipolar high density Figur

2STA1943 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

2STA1962 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulti