2STA1943 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2STA1943  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 230 V

Tensión colector-emisor (Vce): 230 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 225 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO264

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2STA1943 datasheet

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 2sta1943.pdf pdf_icon

2STA1943

2STA1943 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

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 2sta1962.pdf pdf_icon

2STA1943

2STA1962 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulti

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 2sta1694.pdf pdf_icon

2STA1943

2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new Bi

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 2sta1695.pdf pdf_icon

2STA1943

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

MOSTRAR MÁS

Otros transistores... PZT4403, PZTA14, PZTA44, 2ST2121, 2ST31A, 2ST5949, 2STA1694, 2STA1695, BD135, 2STA1962, 2STA2120, 2STA2121, 2STA2510, 2STC2510, 2STC4467, 2STC4468, 2STC5200