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2STA1943 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2STA1943
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 230 V
   Tensión colector-emisor (Vce): 230 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 225 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO264
 

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2STA1943 Datasheet (PDF)

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2sta1943.pdf pdf_icon

2STA1943

2STA1943High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

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2sta1962.pdf pdf_icon

2STA1943

2STA1962High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifier TO-3PDescriptionThis device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulti

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2sta1694.pdf pdf_icon

2STA1943

2STA1694High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new Bi

 9.2. Size:167K  st
2sta1695.pdf pdf_icon

2STA1943

2STA1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC32Applications1 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

Otros transistores... PZT4403 , PZTA14 , PZTA44 , 2ST2121 , 2ST31A , 2ST5949 , 2STA1694 , 2STA1695 , TIP127 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , 2STC4468 , 2STC5200 .

History: BC848BR | MJE13005DRB | 2N4035

 

 
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