2STA1962
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2STA1962
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 230
V
Tensión colector-emisor (Vce): 230
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 150
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de transistor bipolar 2STA1962
2STA1962
Datasheet (PDF)
..1. Size:178K st
2sta1962.pdf
2STA1962High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifier TO-3PDescriptionThis device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulti
8.1. Size:188K st
2sta1943.pdf
2STA1943High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin
9.1. Size:142K st
2sta1694.pdf
2STA1694High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new Bi
9.2. Size:167K st
2sta1695.pdf
2STA1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC32Applications1 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f
9.3. Size:136K st
2sta1837.pdf
2STA1837PNP power bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = -230 V Complementary to 2STC4793 High transition frequency, typical fT = 70 MHzApplications3 Audio power amplifier 21 Drive stage amplifierTO-220FPDescriptionThis device is a PNP transistor manufactured using new PB-HDC (power bipolar high density Figur
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