All Transistors. 2STA1962 Datasheet

 

2STA1962 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2STA1962

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3P

2STA1962 Transistor Equivalent Substitute - Cross-Reference Search

 

2STA1962 Datasheet (PDF)

1.1. 2sta1962.pdf Size:178K _st

2STA1962
2STA1962

2STA1962 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor

4.1. 2sta1943.pdf Size:188K _st

2STA1962
2STA1962

2STA1943 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor

 5.1. 2sta1694.pdf Size:142K _st

2STA1962
2STA1962

2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar t

5.2. 2sta1695.pdf Size:167K _st

2STA1962
2STA1962

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear a

 5.3. 2sta1837.pdf Size:136K _st

2STA1962
2STA1962

2STA1837 PNP power bipolar transistor Preliminary data Features High breakdown voltage VCEO = -230 V Complementary to 2STC4793 High transition frequency, typical fT = 70 MHz Applications 3 Audio power amplifier 2 1 Drive stage amplifier TO-220FP Description This device is a PNP transistor manufactured using new PB-HDC (power bipolar high density Figure 1. Internal sch

Datasheet: PZTA14 , PZTA44 , 2ST2121 , 2ST31A , 2ST5949 , 2STA1694 , 2STA1695 , 2STA1943 , 2N60 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , 2STC4468 , 2STC5200 , 2STC5242 .

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