2STA1962 PDF and Equivalents Search

 

2STA1962 Specs and Replacement

Type Designator: 2STA1962

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3P

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2STA1962 datasheet

 ..1. Size:178K  st

2sta1962.pdf pdf_icon

2STA1962

2STA1962 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulti... See More ⇒

 8.1. Size:188K  st

2sta1943.pdf pdf_icon

2STA1962

2STA1943 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin... See More ⇒

 9.1. Size:142K  st

2sta1694.pdf pdf_icon

2STA1962

2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new Bi... See More ⇒

 9.2. Size:167K  st

2sta1695.pdf pdf_icon

2STA1962

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f... See More ⇒

Detailed specifications: PZTA14, PZTA44, 2ST2121, 2ST31A, 2ST5949, 2STA1694, 2STA1695, 2STA1943, C3198, 2STA2120, 2STA2121, 2STA2510, 2STC2510, 2STC4467, 2STC4468, 2STC5200, 2STC5242

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