2STC4468 Todos los transistores

 

2STC4468 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2STC4468

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 150 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO3P

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2STC4468 datasheet

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 2stc4468.pdf pdf_icon

2STC4468

2STC4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

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2STC4468

2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT

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 2stc4793.pdf pdf_icon

2STC4468

2STC4793 NPN power bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHz Applications Audio power amplifier 3 2 Drive stage amplifier 1 TO-220FP Description This device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu

Otros transistores... 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , D880 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 , 2STF1550 , 2STF2220 .

 

 

 

 

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