2STC4468 Datasheet and Replacement
Type Designator: 2STC4468
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO3P
2STC4468 Substitution
2STC4468 Datasheet (PDF)
2stc4468.pdf

2STC4468High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for
2stc4467.pdf

2STC4467High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT
2stc4793.pdf

2STC4793NPN power bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHzApplications Audio power amplifier32 Drive stage amplifier1TO-220FPDescriptionThis device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KT837G | D38L2 | MMBTH10LT1 | PBHV8115Z | 2N6515 | E1617 | ECG33
Keywords - 2STC4468 transistor datasheet
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History: KT837G | D38L2 | MMBTH10LT1 | PBHV8115Z | 2N6515 | E1617 | ECG33



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