All Transistors. 2STC4468 Datasheet

 

2STC4468 Datasheet and Replacement


   Type Designator: 2STC4468
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO3P
 

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2STC4468 Datasheet (PDF)

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2STC4468

2STC4468High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

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2STC4468

2STC4467High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT

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 2stc4793.pdf pdf_icon

2STC4468

2STC4793NPN power bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHzApplications Audio power amplifier32 Drive stage amplifier1TO-220FPDescriptionThis device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu

Datasheet: 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , 2SD669A , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 , 2STF1550 , 2STF2220 .

History: 2N472A | 2SC4077 | 2SC3916

Keywords - 2STC4468 transistor datasheet

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