2STC5949 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2STC5949  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 220 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 25 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO264

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2STC5949 datasheet

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 2stc5949.pdf pdf_icon

2STC5949

2STC5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear

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 2stc5948.pdf pdf_icon

2STC5949

2STC5948 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for

 9.1. Size:182K  st
 2stc5200.pdf pdf_icon

2STC5949

2STC5200 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting

 9.2. Size:183K  st
 2stc5242.pdf pdf_icon

2STC5949

2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

MOSTRAR MÁS

Otros transistores... 2STA2120, 2STA2121, 2STA2510, 2STC2510, 2STC4467, 2STC4468, 2STC5200, 2STC5242, 2SA1015, 2STD1665, 2STF1340, 2STF1360, 2STF1550, 2STF2220, 2STF2340, 2STF2360, 2STF2550