2STC5949 Todos los transistores

 

2STC5949 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2STC5949
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 220 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 17 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO264
 

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2STC5949 Datasheet (PDF)

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2stc5949.pdf pdf_icon

2STC5949

2STC5949High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear

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2stc5948.pdf pdf_icon

2STC5949

2STC5948High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for

 9.1. Size:182K  st
2stc5200.pdf pdf_icon

2STC5949

2STC5200High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting

 9.2. Size:183K  st
2stc5242.pdf pdf_icon

2STC5949

2STC5242High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifier TO-3PDescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: OC71N | UN6221 | UN2117S

 

 
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