STX112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STX112
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1000
Empaquetado / Estuche: TO92
Búsqueda de reemplazo de transistor bipolar STX112
STX112 Datasheet (PDF)
1.1. stx112.pdf 
Size:151K _st
STX112 ® SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration TO-92 mounted in TO-92 plastic package. It is intented for use in linear and s
1.2. stx112 stx117.pdf Size:338K _st
STX112 STX117 Complementary power Darlington transistors . Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application TO-92 AP ■ Linear and switching industrial equipment Description The devices are manufactured in planar Figure 1. Internal schematic diagram technology with
Otros transistores... KT326AM , KT326B , KT326BM , KT333A-3 , KT333B-3 , KT333D-3 , KT333E-3 , KT333G-3 , 9014 , KT336A , KT336B , KT336D , KT336E , KT336G , KT336V , KT337A , KT337B .
