All Transistors. STX112 Datasheet

 

STX112 Datasheet, Equivalent, Cross Reference Search

Type Designator: STX112

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO92

STX112 Transistor Equivalent Substitute - Cross-Reference Search

 

STX112 Datasheet (PDF)

0.1. stx112.pdf Size:151K _st

STX112
STX112

STX112SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPNtransistor in monolithic Darlington configurationTO-92mounted in TO-92 plastic package. It is intentedfor use in linear and s

0.2. stx112 stx117.pdf Size:338K _st

STX112
STX112

STX112STX117Complementary power Darlington transistors .Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplicationTO-92 AP Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramtechnology with

 

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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