STX112 Datasheet, Equivalent, Cross Reference Search
Type Designator: STX112
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO92
STX112 Transistor Equivalent Substitute - Cross-Reference Search
STX112 Datasheet (PDF)
stx112 stx117.pdf
STX112STX117Complementary power Darlington transistors .Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplicationTO-92 AP Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramtechnology with
stx112.pdf
STX112SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPNtransistor in monolithic Darlington configurationTO-92mounted in TO-92 plastic package. It is intentedfor use in linear and s
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS