All Transistors. STX112 Datasheet

 

STX112 Datasheet and Replacement


   Type Designator: STX112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92
 

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STX112 Datasheet (PDF)

 ..1. Size:338K  st
 stx112 stx117.pdf pdf_icon

STX112

STX112STX117Complementary power Darlington transistors .Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplicationTO-92 AP Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramtechnology with

 ..2. Size:151K  st
 stx112.pdf pdf_icon

STX112

STX112SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPNtransistor in monolithic Darlington configurationTO-92mounted in TO-92 plastic package. It is intentedfor use in linear and s

Datasheet: STSA1805 , STSA851 , STT13005 , STT818B , STW13009 , STW3040 , STWH13009 , STX0560 , TIP42C , STX13003 , STX13005 , STX616 , STX715 , STX724 , STX790A , STX817A , STX826 .

History: SK3449 | 2N1713 | TED1402E | D32S6 | 2PD601AW | M8050-D | BC308C-92

Keywords - STX112 transistor datasheet

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