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STX112 Specs and Replacement


   Type Designator: STX112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92
 

 STX112 Substitution

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STX112 detailed specifications

 ..1. Size:338K  st
 stx112 stx117.pdf pdf_icon

STX112

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 ..2. Size:151K  st
 stx112.pdf pdf_icon

STX112

STX112 SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration TO-92 mounted in TO-92 plastic package. It is intented for use in linear and s... See More ⇒

Detailed specifications: STSA1805 , STSA851 , STT13005 , STT818B , STW13009 , STW3040 , STWH13009 , STX0560 , TIP42C , STX13003 , STX13005 , STX616 , STX715 , STX724 , STX790A , STX817A , STX826 .

History: 2SC4937 | HS3403

Keywords - STX112 transistor specs

 STX112 cross reference
 STX112 equivalent finder
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