STX112 Datasheet. Specs and Replacement

Type Designator: STX112  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO92

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STX112 datasheet

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 stx112 stx117.pdf pdf_icon

STX112

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 stx112.pdf pdf_icon

STX112

STX112 SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration TO-92 mounted in TO-92 plastic package. It is intented for use in linear and s... See More ⇒

Detailed specifications: STSA1805, STSA851, STT13005, STT818B, STW13009, STW3040, STWH13009, STX0560, TIP42C, STX13003, STX13005, STX616, STX715, STX724, STX790A, STX817A, STX826

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