STX112 Datasheet, Equivalent, Cross Reference Search
Type Designator: STX112
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO92
STX112 Transistor Equivalent Substitute - Cross-Reference Search
STX112 Datasheet (PDF)
stx112 stx117.pdf
STX112STX117Complementary power Darlington transistors .Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplicationTO-92 AP Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramtechnology with
stx112.pdf
STX112SILICON NPN POWER DARLINGTON TRANSISTOR MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPNtransistor in monolithic Darlington configurationTO-92mounted in TO-92 plastic package. It is intentedfor use in linear and s
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
