2SC5376 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5376

Código: FA_FB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.4 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 4.2 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SSM

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2SC5376 datasheet

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 2sc5376.pdf pdf_icon

2SC5376

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low collector saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Un

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 2sc5376fv.pdf pdf_icon

2SC5376

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) 1.2 0.05 @IC = 10 mA/IB = 0.5 mA 0.8 0.05 High Collector Current IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C)

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 2sc5376f.pdf pdf_icon

2SC5376

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating

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 2sc5376ct.pdf pdf_icon

2SC5376

MOSTRAR MÁS

Otros transistores... 2SA562TM, 2SC1815L, BUL62B, 2SC4666, 2SC4738F, 2SC4738FT, 2SC5232, 2SC5233, MPSA42, 2SC5376CT, 2SC5376F, 2SC5376FV, 2SC5720, 2SC5765, 2SC5766, 2SC6026, 2SC6026CT