2SC5376 Specs and Replacement
Type Designator: 2SC5376
SMD Transistor Code: FA_FB
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SSM
2SC5376 Substitution
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2SC5376 datasheet
2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low collector saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Un... See More ⇒
2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) 1.2 0.05 @IC = 10 mA/IB = 0.5 mA 0.8 0.05 High Collector Current IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒
2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating ... See More ⇒
Detailed specifications: 2SA562TM, 2SC1815L, BUL62B, 2SC4666, 2SC4738F, 2SC4738FT, 2SC5232, 2SC5233, MPSA42, 2SC5376CT, 2SC5376F, 2SC5376FV, 2SC5720, 2SC5765, 2SC5766, 2SC6026, 2SC6026CT
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