HN1A07F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1A07F
Código: 47
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: SM6
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HN1A07F datasheet
hn1a07f.pdf
HN1A07F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F Unit mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity hFE(2) =25 (Min.) at VCE = -6V IC = -400mA Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collecto
hn1a01fe.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)
hn1a01f.pdf
HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
Otros transistores... TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, HN1A02F, 2N3055, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU, HN1B26FS, HN1C01F
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