HN1A07F Datasheet, Equivalent, Cross Reference Search
Type Designator: HN1A07F
SMD Transistor Code: 47
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SM6
HN1A07F Transistor Equivalent Substitute - Cross-Reference Search
HN1A07F Datasheet (PDF)
hn1a07f.pdf
HN1A07F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F Unit: mmAudio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = -6V IC = -400mA Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollecto
hn1a01fe.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)
hn1a01f.pdf
HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
hn1a01fe-y hn1a01fe-gr.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
hn1a01fu.pdf
HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V =-50V, I =-150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings
hn1a02f.pdf
HN1A02F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F Unit: mmAudio Frequency Power Amplifier Applications Switching applications High hFE : hFE(1) = 120~400 Low VCE(sat.) : VCE (sat) = -0.2 V (max.) (IC = -400 mA, IB = -8 mA) Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating U
hn1a01fu.pdf
SMD Type Transistors PNP TransistorsHN1A01FU (KN1A01FU ) Features High voltage and high current High hFE: hFE = 120~400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
