HN1A07F Specs and Replacement
Type Designator: HN1A07F
SMD Transistor Code: 47
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SM6
HN1A07F Substitution
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HN1A07F datasheet
HN1A07F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F Unit mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity hFE(2) =25 (Min.) at VCE = -6V IC = -400mA Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collecto... See More ⇒
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒
HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25... See More ⇒
Detailed specifications: TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, HN1A02F, 2N3055, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU, HN1B26FS, HN1C01F
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History: RS7515
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