HN1C05FE Todos los transistores

 ..1. Size:207K  toshiba
 hn1c05fe.pdf

HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C05FE Unit mm Low Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage VCE(sat)(1)=15mV (Typ.) @ IC = 10mA/ IB = 0.5mA High Collector Current IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collec

 9.1. Size:240K  toshiba
 hn1c01fu.pdf

HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current V = 50V, I = 150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings

 9.2. Size:180K  toshiba
 hn1c01fe.pdf

HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q

 9.3. Size:286K  toshiba
 hn1c03fu.pdf

HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit mm For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage V = 25V (min) EBO High reverse h reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance R = 1 (typ.)(I = 5mA) ON B Absolute Maximum

 9.4. Size:132K  toshiba
 hn1c07f.pdf

HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F Unit mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity hFE(2) =25 (min) at VCE = 6V IC = 400mA Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector

 9.5. Size:310K  toshiba
 hn1c03f.pdf

HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage V = 25V (min) EBO High reverse h reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance R = 1 (typ.)(IB = 5mA) ON Absolute Maximum Rating

 9.6. Size:237K  toshiba
 hn1c01f.pdf

HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = 50 V, IC = 150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)