HN1C05FE Datasheet, Equivalent, Cross Reference Search
Type Designator: HN1C05FE
SMD Transistor Code: FA_FB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: ES6
HN1C05FE Transistor Equivalent Substitute - Cross-Reference Search
HN1C05FE Datasheet (PDF)
hn1c05fe.pdf
HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C05FE Unit: mmLow Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollec
hn1c01fu.pdf
HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings
hn1c01fe.pdf
HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q
hn1c03fu.pdf
HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit: mmFor Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(I = 5mA) ON BAbsolute Maximum
hn1c07f.pdf
HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F Unit: mmAudio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector
hn1c03f.pdf
HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(IB = 5mA) ONAbsolute Maximum Rating
hn1c01f.pdf
HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
