RN1101FS Todos los transistores

 

RN1101FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1101FS
   Código: L0
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: FSM
     - Selección de transistores por parámetros

 

RN1101FS Datasheet (PDF)

 ..1. Size:126K  toshiba
 rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf pdf_icon

RN1101FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 0.1. Size:98K  toshiba
 rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf pdf_icon

RN1101FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 7.1. Size:147K  toshiba
 rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1101FS

RN1101FRN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent

 7.2. Size:211K  toshiba
 rn1101ft-1106ft xa-b-c-d-e-f sot623.pdf pdf_icon

RN1101FS

RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resis

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BFY25 | BCX79-10 | 3CG21 | HSE164 | MRF957T1 | ZTX758 | SBC328

 

 
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