RN1101FS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1101FS

Código: L0

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: FSM

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RN1101FS datasheet

 ..1. Size:126K  toshiba
 rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf pdf_icon

RN1101FS

RN1101FS RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 0.1. Size:98K  toshiba
 rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf pdf_icon

RN1101FS

RN1101FS RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 7.1. Size:147K  toshiba
 rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1101FS

RN1101F RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F RN2106F Equivalent

 7.2. Size:211K  toshiba
 rn1101ft-1106ft xa-b-c-d-e-f sot623.pdf pdf_icon

RN1101FS

RN1101FT RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resis

MOSTRAR MÁS

Otros transistores... HN4B04J, HN4B06J, HN4C05JU, HN4C06J, HN4C08J, HN4C51J, RN1101ACT, RN1101CT, 2SD2499, RN1101MFV, RN1101, RN1102ACT, RN1102CT, RN1102FS, RN1102MFV, RN1102, RN1103ACT