RN1101FS Specs and Replacement

Type Designator: RN1101FS

SMD Transistor Code: L0

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: FSM

 RN1101FS Substitution

- BJT ⓘ Cross-Reference Search

 

RN1101FS datasheet

 ..1. Size:126K  toshiba

 rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf pdf_icon

RN1101FS

RN1101FS RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e... See More ⇒

 0.1. Size:98K  toshiba

 rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf pdf_icon

RN1101FS

RN1101FS RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e... See More ⇒

 7.1. Size:147K  toshiba

 rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1101FS

RN1101F RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F RN2106F Equivalent ... See More ⇒

 7.2. Size:211K  toshiba

 rn1101ft-1106ft xa-b-c-d-e-f sot623.pdf pdf_icon

RN1101FS

RN1101FT RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resis... See More ⇒

SHOW MORE

Detailed specifications: HN4B04J, HN4B06J, HN4C05JU, HN4C06J, HN4C08J, HN4C51J, RN1101ACT, RN1101CT, 2SD2499, RN1101MFV, RN1101, RN1102ACT, RN1102CT, RN1102FS, RN1102MFV, RN1102, RN1103ACT

Keywords - RN1101FS pdf specs

 RN1101FS cross reference

 RN1101FS equivalent finder

 RN1101FS pdf lookup

 RN1101FS substitution

 RN1101FS replacement