All Transistors. RN1101FS Datasheet

 

RN1101FS Datasheet and Replacement


   Type Designator: RN1101FS
   SMD Transistor Code: L0
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: FSM
 

 RN1101FS Substitution

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RN1101FS Datasheet (PDF)

 ..1. Size:126K  toshiba
rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf pdf_icon

RN1101FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 0.1. Size:98K  toshiba
rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf pdf_icon

RN1101FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 7.1. Size:147K  toshiba
rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1101FS

RN1101FRN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent

 7.2. Size:211K  toshiba
rn1101ft-1106ft xa-b-c-d-e-f sot623.pdf pdf_icon

RN1101FS

RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resis

Datasheet: HN4B04J , HN4B06J , HN4C05JU , HN4C06J , HN4C08J , HN4C51J , RN1101ACT , RN1101CT , TIP42 , RN1101MFV , RN1101 , RN1102ACT , RN1102CT , RN1102FS , RN1102MFV , RN1102 , RN1103ACT .

History: DTC301 | DTC502 | 2SC4515 | TN3392

Keywords - RN1101FS transistor datasheet

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