RN1106 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1106

Código: XF

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT416 SC75 SSM

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RN1106 datasheet

 ..1. Size:566K  toshiba
 rn1101 rn1106.pdf pdf_icon

RN1106

RN1101 RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2101 RN2106 Equivale

 0.1. Size:168K  toshiba
 rn1101act rn1106act.pdf pdf_icon

RN1106

RN1101ACT RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor r

 0.2. Size:167K  toshiba
 rn1101ct rn1106ct.pdf pdf_icon

RN1106

RN1101CT RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces par

 0.3. Size:1016K  toshiba
 rn1101mfv rn1102mfv rn1103mfv rn1104mfv rn1105mfv rn1106mfv.pdf pdf_icon

RN1106

RN1101MFV RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of par

MOSTRAR MÁS

Otros transistores... RN1105CT, RN1105FS, RN1105MFV, RN1105, RN1106ACT, RN1106CT, RN1106FS, RN1106MFV, 2SD669, RN1107ACT, RN1107CT, RN1107FS, RN1107MFV, RN1107, RN1108ACT, RN1108CT, RN1108FS