RN1106 Specs and Replacement

Type Designator: RN1106

SMD Transistor Code: XF

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT416 SC75 SSM

 RN1106 Substitution

- BJT ⓘ Cross-Reference Search

 

RN1106 datasheet

 ..1. Size:566K  toshiba

 rn1101 rn1106.pdf pdf_icon

RN1106

RN1101 RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2101 RN2106 Equivale... See More ⇒

 0.1. Size:168K  toshiba

 rn1101act rn1106act.pdf pdf_icon

RN1106

RN1101ACT RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor r... See More ⇒

 0.2. Size:167K  toshiba

 rn1101ct rn1106ct.pdf pdf_icon

RN1106

RN1101CT RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces par... See More ⇒

 0.3. Size:1016K  toshiba

 rn1101mfv rn1102mfv rn1103mfv rn1104mfv rn1105mfv rn1106mfv.pdf pdf_icon

RN1106

RN1101MFV RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of par... See More ⇒

SHOW MORE

Detailed specifications: RN1105CT, RN1105FS, RN1105MFV, RN1105, RN1106ACT, RN1106CT, RN1106FS, RN1106MFV, 2SD669, RN1107ACT, RN1107CT, RN1107FS, RN1107MFV, RN1107, RN1108ACT, RN1108CT, RN1108FS

Keywords - RN1106 pdf specs

 RN1106 cross reference

 RN1106 equivalent finder

 RN1106 pdf lookup

 RN1106 substitution

 RN1106 replacement