RN1106 Datasheet and Replacement
Type Designator: RN1106
SMD Transistor Code: XF
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT416 SC75 SSM
RN1106 Substitution
RN1106 Datasheet (PDF)
rn1101 rn1106.pdf

RN1101RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2101~ RN2106 Equivale
rn1101act rn1106act.pdf

RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.050.50.03Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor r
rn1101ct rn1106ct.pdf

RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Unit: mmInverter Circuit Applications 0.60.050.50.03Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces par
rn1101mfv rn1102mfv rn1103mfv rn1104mfv rn1105mfv rn1106mfv.pdf

RN1101MFVRN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of par
Datasheet: RN1105CT , RN1105FS , RN1105MFV , RN1105 , RN1106ACT , RN1106CT , RN1106FS , RN1106MFV , BC549 , RN1107ACT , RN1107CT , RN1107FS , RN1107MFV , RN1107 , RN1108ACT , RN1108CT , RN1108FS .
History: MP3250A | MMPQ3467 | 2SB353A | DTC124EKAFRA | 2SD5041Q | 2SB30 | DTA216
Keywords - RN1106 transistor datasheet
RN1106 cross reference
RN1106 equivalent finder
RN1106 lookup
RN1106 substitution
RN1106 replacement
History: MP3250A | MMPQ3467 | 2SB353A | DTC124EKAFRA | 2SD5041Q | 2SB30 | DTA216



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1384 | mj21196g | irfb4115 | 21270 transistor | k3569 | irf640 datasheet | c945 transistor equivalent | irfz44 datasheet