RN1130MFV Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1130MFV
Código: X2
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT723 VESM
Búsqueda de reemplazo de RN1130MFV
Principales características: RN1130MFV
rn1130mfv.pdf
RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1130MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications 1 With built-in bias resistors Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complementary to RN2130MFV E
rn1131mfv rn1132mfv.pdf
RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1131MFV,RN1132MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complement
pbrn113es pbrn113e pbrn113ek.pdf
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES
pbrn113e.pdf
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES
Otros transistores... RN1117F , RN1117MFV , RN1117 , RN1118FT , RN1118F , RN1118MFV , RN1118 , RN1119MFV , BC327 , RN1131MFV , RN1132MFV , RN1301 , RN1302 , RN1303 , RN1304 , RN1305 , RN1306 .
History: 2N4854
History: 2N4854
Liste
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