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RN1130MFV Specs and Replacement


   Type Designator: RN1130MFV
   SMD Transistor Code: X2
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT723 VESM
 

 RN1130MFV Substitution

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RN1130MFV detailed specifications

 ..1. Size:151K  toshiba
rn1130mfv.pdf pdf_icon

RN1130MFV

RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1130MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications 1 With built-in bias resistors Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complementary to RN2130MFV E... See More ⇒

 9.1. Size:160K  toshiba
rn1131mfv rn1132mfv.pdf pdf_icon

RN1130MFV

RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1131MFV,RN1132MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complement... See More ⇒

 9.2. Size:152K  nxp
pbrn113es pbrn113e pbrn113ek.pdf pdf_icon

RN1130MFV

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

 9.3. Size:147K  nxp
pbrn113e.pdf pdf_icon

RN1130MFV

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

Detailed specifications: RN1117F , RN1117MFV , RN1117 , RN1118FT , RN1118F , RN1118MFV , RN1118 , RN1119MFV , BC327 , RN1131MFV , RN1132MFV , RN1301 , RN1302 , RN1303 , RN1304 , RN1305 , RN1306 .

History: 2N4854 | BD508-5 | BD509

Keywords - RN1130MFV transistor specs

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