RN1130MFV Datasheet. Specs and Replacement

Type Designator: RN1130MFV  📄📄 

SMD Transistor Code: X2

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT723 VESM

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RN1130MFV datasheet

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RN1130MFV

RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1130MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications 1 With built-in bias resistors Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complementary to RN2130MFV E... See More ⇒

 9.1. Size:160K  toshiba

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RN1130MFV

RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1131MFV,RN1132MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complement... See More ⇒

 9.2. Size:152K  nxp

pbrn113es pbrn113e pbrn113ek.pdf pdf_icon

RN1130MFV

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

 9.3. Size:147K  nxp

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RN1130MFV

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

Detailed specifications: RN1117F, RN1117MFV, RN1117, RN1118FT, RN1118F, RN1118MFV, RN1118, RN1119MFV, BC327, RN1131MFV, RN1132MFV, RN1301, RN1302, RN1303, RN1304, RN1305, RN1306

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