RN1701JE Todos los transistores

 

RN1701JE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1701JE
   Código: XA
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT553 ESV

 Búsqueda de reemplazo de transistor bipolar RN1701JE

 

RN1701JE Datasheet (PDF)

 0.1. Size:314K  toshiba
rn1701je-rn1706je.pdf

RN1701JE
RN1701JE

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a trans

 8.1. Size:141K  toshiba
rn1701-rn1706.pdf

RN1701JE
RN1701JE

RN1701~RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1701,RN1702,RN1703 RN1704,RN1705,RN1706 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.1. Size:197K  toshiba
rn1707je-rn1709je.pdf

RN1701JE
RN1701JE

RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE,RN1708JE,RN1709JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 9.2. Size:132K  toshiba
rn1707-rn1709.pdf

RN1701JE
RN1701JE

RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1707,RN1708,RN1709 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

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History: 2SB414 | MJ421 | 2SD684

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