All Transistors. RN1701JE Datasheet

 

RN1701JE Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN1701JE
   SMD Transistor Code: XA
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT553 ESV

 RN1701JE Transistor Equivalent Substitute - Cross-Reference Search

   

RN1701JE Datasheet (PDF)

 0.1. Size:314K  toshiba
rn1701je-rn1706je.pdf

RN1701JE
RN1701JE

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a trans

 8.1. Size:141K  toshiba
rn1701-rn1706.pdf

RN1701JE
RN1701JE

RN1701~RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1701,RN1702,RN1703 RN1704,RN1705,RN1706 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.1. Size:197K  toshiba
rn1707je-rn1709je.pdf

RN1701JE
RN1701JE

RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE,RN1708JE,RN1709JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 9.2. Size:132K  toshiba
rn1707-rn1709.pdf

RN1701JE
RN1701JE

RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1707,RN1708,RN1709 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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