2N573 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N573
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 25 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N573
2N573 Datasheet (PDF)
2n5739.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5739 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT
2n5732.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5732 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
2n5738.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5738 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA
2n5737.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT
2n5734.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5734 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
Otros transistores... 2N5710 , 2N5711 , 2N5712 , 2N5713 , 2N5714 , 2N5715 , 2N572 , 2N5729 , A733 , 2N5730 , 2N5731 , 2N5732 , 2N5733 , 2N5734 , 2N5735 , 2N5736 , 2N5737 .
