2N573 - параметры, поиск аналогов, даташиты транзистора

2N573 Datasheet (PDF)

0.1. Size:51K inchange semiconductor
2n5739.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5739 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT

0.2. Size:129K inchange semiconductor
2n5732.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5732 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

0.3. Size:36K inchange semiconductor
2n5738.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5738 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA

0.4. Size:36K inchange semiconductor
2n5737.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT