RN1912AFS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1912AFS 📄📄
Código: CH
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 0.7 pF
📄📄 Copiar
Búsqueda de reemplazo de RN1912AFS
- Selecciónⓘ de transistores por parámetros
RN1912AFS datasheet
rn1912afs rn1913afs.pdf
RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Unit mm 1.0 0.05 Driver Circuit Applications 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias
rn1912fs rn1913fs.pdf
RN1912FS,RN1913FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1912FS,RN1913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.0 0.05 package. 0.8 0.05 0.1 0.05 0.1 0.05 Incorporating a bias resistor into
rn1910afs rn1911afs.pdf
RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia
rn1910fe-rn1911fe.pdf
RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing
Otros transistores... RN1910AFS, RN1910FE, RN1910FS, RN1910, RN1911AFS, RN1911FE, RN1911FS, RN1911, TIP142, RN1912FS, RN1913AFS, RN1913FS, RN1961CT, RN1961FE, RN1961FS, RN1961, RN1962CT
Parámetros del transistor bipolar y su interrelación.
History: RN1963 | BC338-10 | WT4321-25 | RN2709JE | RN47A2JE | 2SA1069A-Z | 2SC4704
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor | irfbc40






