RN1913FS
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1913FS
Código: FJ
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
SOT963
FS6
Búsqueda de reemplazo de transistor bipolar RN1913FS
RN1913FS
Datasheet (PDF)
..1. Size:141K toshiba
rn1912fs rn1913fs.pdf
RN1912FS,RN1913FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1912FS,RN1913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.00.05package. 0.80.05 0.10.050.10.05 Incorporating a bias resistor into
8.1. Size:133K toshiba
rn1912afs rn1913afs.pdf
RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Unit: mm1.00.05Driver Circuit Applications 0.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias
9.1. Size:133K toshiba
rn1910afs rn1911afs.pdf
RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia
9.2. Size:145K toshiba
rn1910fe-rn1911fe.pdf
RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing
9.3. Size:120K toshiba
rn1910fs rn1911fs.pdf
RN1910FS,RN1911FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resistor into a
9.4. Size:111K toshiba
rn1910-rn1911.pdf
RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2910,
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