RN1966 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1966  📄📄 

Código: XXF

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT363 SC88 US6

  📄📄 Copiar 

 Búsqueda de reemplazo de RN1966

- Selecciónⓘ de transistores por parámetros

 

RN1966 datasheet

 0.1. Size:191K  toshiba
 rn1961ct rn1966ct.pdf pdf_icon

RN1966

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma

 0.2. Size:544K  toshiba
 rn1961fe rn1966fe.pdf pdf_icon

RN1966

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans

 0.3. Size:130K  toshiba
 rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf pdf_icon

RN1966

RN1961FS RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1

 0.4. Size:143K  toshiba
 rn1961-rn1966.pdf pdf_icon

RN1966

RN1961 RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1964,RN1965,RN1966 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

MOSTRAR MÁS

Otros transistores... RN1964, RN1965CT, RN1965FE, RN1965FS, RN1965, RN1966CT, RN1966FE, RN1966FS, 2N3055, RN1967CT, RN1967FE, RN1967FS, RN1967, RN1968CT, RN1968FE, RN1968FS, RN1968