All Transistors. RN1966 Datasheet

 

RN1966 Datasheet, Equivalent, Cross Reference Search

Type Designator: RN1966

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT363_SC88_US6

RN1966 Transistor Equivalent Substitute - Cross-Reference Search

 

RN1966 Datasheet (PDF)

1.1. rn1961-rn1966.pdf Size:143K _toshiba

RN1966
RN1966

RN1961~RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1964,RN1965,RN1966 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

1.2. rn1961fe-rn1966fe.pdf Size:193K _toshiba

RN1966
RN1966

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor r

1.3. rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf Size:130K _toshiba

RN1966
RN1966

RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.00.05 0.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Inc

1.4. rn1961ct rn1966ct 090414.pdf Size:191K _toshiba

RN1966
RN1966

RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit: mm Inverter Circuit Applications 1.00.05 0.150.03 Interface Circuit Applications Driver Circuit Applications 6 5 4 Two devices are incorporated into a fine pitch Small Mold (6 pi

1.5. rn1961fe rn1966fe 100520.pdf Size:544K _toshiba

RN1966
RN1966

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor r

Datasheet: RN1964 , RN1965CT , RN1965FE , RN1965FS , RN1965 , RN1966CT , RN1966FE , RN1966FS , TIP31 , RN1967CT , RN1967FE , RN1967FS , RN1967 , RN1968CT , RN1968FE , RN1968FS , RN1968 .

 


RN1966
  RN1966
  RN1966
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |