RN2107ACT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2107ACT  📄📄 

Código: C6

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT883 CST3

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RN2107ACT datasheet

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RN2107ACT

RN2107ACT RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107ACT,RN2108ACT,RN2109ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Top View 0.6 0.05 0.5 0.03 Extra small package (CST3) is applicable for extra high density fabrication. Incorporating a bias resistor

 8.1. Size:177K  toshiba
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RN2107ACT

RN2107 RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resister Values T

 8.2. Size:162K  toshiba
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RN2107ACT

RN2107FS RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 8.3. Size:146K  toshiba
rn2107ft-rn2109ft.pdf pdf_icon

RN2107ACT

RN2107FT RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

Otros transistores... RN2105FS, RN2105MFV, RN2105, RN2106ACT, RN2106CT, RN2106FS, RN2106MFV, RN2106, D209L, RN2107CT, RN2107FS, RN2107MFV, RN2107, RN2108ACT, RN2108CT, RN2108FS, RN2108MFV