RN2107CT Todos los transistores

 

RN2107CT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2107CT
   Código: U6
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT883 CST3
 

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RN2107CT Datasheet (PDF)

 ..1. Size:144K  toshiba
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RN2107CT

RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Unit: mmInverter Circuit Applications Top View Interface Circuit Applications 0.60.050.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.

 8.1. Size:177K  toshiba
rn2107 rn2108 rn2109.pdf pdf_icon

RN2107CT

RN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107~RN1109 Equivalent Circuit and Bias Resister Values T

 8.2. Size:162K  toshiba
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RN2107CT

RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 8.3. Size:146K  toshiba
rn2107ft-rn2109ft.pdf pdf_icon

RN2107CT

RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

Otros transistores... RN2105MFV , RN2105 , RN2106ACT , RN2106CT , RN2106FS , RN2106MFV , RN2106 , RN2107ACT , D880 , RN2107FS , RN2107MFV , RN2107 , RN2108ACT , RN2108CT , RN2108FS , RN2108MFV , RN2108 .

History: TN3395 | HEPG0011 | BU223A | PBHV9540Z | 2SA1923

 

 
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