RN2107FS Todos los transistores

 

RN2107FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2107FS
   Código: U6
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: FSM
     - Selección de transistores por parámetros

 

RN2107FS Datasheet (PDF)

 ..1. Size:162K  toshiba
rn2107fs rn2108fs rn2109fs.pdf pdf_icon

RN2107FS

RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 7.1. Size:146K  toshiba
rn2107ft-rn2109ft.pdf pdf_icon

RN2107FS

RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

 7.2. Size:326K  toshiba
rn2107f rn2109f.pdf pdf_icon

RN2107FS

RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister Valu

 7.3. Size:82K  toshiba
rn2107f-rn2109f.pdf pdf_icon

RN2107FS

RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister V

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