RN2107FS Datasheet. Specs and Replacement

Type Designator: RN2107FS  📄📄 

SMD Transistor Code: U6

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: FSM

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RN2107FS datasheet

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RN2107FS

RN2107FS RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip... See More ⇒

 7.1. Size:146K  toshiba

 rn2107ft-rn2109ft.pdf pdf_icon

RN2107FS

RN2107FT RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p... See More ⇒

 7.2. Size:326K  toshiba

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RN2107FS

RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister Valu... See More ⇒

 7.3. Size:82K  toshiba

 rn2107f-rn2109f.pdf pdf_icon

RN2107FS

RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister V... See More ⇒

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Detailed specifications: RN2105, RN2106ACT, RN2106CT, RN2106FS, RN2106MFV, RN2106, RN2107ACT, RN2107CT, 2222A, RN2107MFV, RN2107, RN2108ACT, RN2108CT, RN2108FS, RN2108MFV, RN2108, RN2109ACT

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