All Transistors. RN2107FS Datasheet

 

RN2107FS Datasheet and Replacement


   Type Designator: RN2107FS
   SMD Transistor Code: U6
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FSM
 

 RN2107FS Substitution

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RN2107FS Datasheet (PDF)

 ..1. Size:162K  toshiba
rn2107fs rn2108fs rn2109fs.pdf pdf_icon

RN2107FS

RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 7.1. Size:146K  toshiba
rn2107ft-rn2109ft.pdf pdf_icon

RN2107FS

RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

 7.2. Size:326K  toshiba
rn2107f rn2109f.pdf pdf_icon

RN2107FS

RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister Valu

 7.3. Size:82K  toshiba
rn2107f-rn2109f.pdf pdf_icon

RN2107FS

RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister V

Datasheet: RN2105 , RN2106ACT , RN2106CT , RN2106FS , RN2106MFV , RN2106 , RN2107ACT , RN2107CT , SS8050 , RN2107MFV , RN2107 , RN2108ACT , RN2108CT , RN2108FS , RN2108MFV , RN2108 , RN2109ACT .

History: BFU590Q | 3DD4013_A6D

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