RN2108FS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2108FS 📄📄
Código: U7
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: FSM
📄📄 Copiar
Búsqueda de reemplazo de RN2108FS
- Selecciónⓘ de transistores por parámetros
RN2108FS datasheet
..1. Size:162K toshiba
rn2107fs rn2108fs rn2109fs.pdf 
RN2107FS RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip
8.1. Size:177K toshiba
rn2107 rn2108 rn2109.pdf
RN2107 RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resister Values T
8.2. Size:194K toshiba
rn2107mfv rn2108mfv rn2109mfv.pdf
RN2107MFV RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.8 0.05 enabling the ma
9.1. Size:188K toshiba
rn2101ct rn2106ct.pdf
RN2101CT RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p
9.2. Size:189K toshiba
rn2101act rn2106act.pdf
RN2101ACT RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.6 0.05 0.5 0.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc
9.3. Size:146K toshiba
rn2107ft-rn2109ft.pdf
RN2107FT RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p
9.4. Size:144K toshiba
rn2107ct rn2109ct.pdf
RN2107CT RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Unit mm Inverter Circuit Applications Top View Interface Circuit Applications 0.6 0.05 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
9.5. Size:326K toshiba
rn2107f rn2109f.pdf
RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister Valu
9.6. Size:82K toshiba
rn2107f-rn2109f.pdf
RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister V
9.7. Size:144K toshiba
rn2107act rn2109act.pdf
RN2107ACT RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107ACT,RN2108ACT,RN2109ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Top View 0.6 0.05 0.5 0.03 Extra small package (CST3) is applicable for extra high density fabrication. Incorporating a bias resistor
9.8. Size:167K toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf
RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red
9.9. Size:194K toshiba
rn2101f-rn2106f.pdf
RN2101F RN2106F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101F RN1106F Equivalent Cir
9.10. Size:256K toshiba
rn2101 rn2102 rn2103 rn2104 rn2105 rn2106.pdf
RN2101 RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101 RN1106 Equivalent Circuit and B
9.11. Size:201K toshiba
rn2101ft-rn2106ft.pdf
RN2101FT RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor
9.12. Size:200K toshiba
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf
RN2101MFV RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.2 0.05 0.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the
Otros transistores... RN2106, RN2107ACT, RN2107CT, RN2107FS, RN2107MFV, RN2107, RN2108ACT, RN2108CT, TIP2955, RN2108MFV, RN2108, RN2109ACT, RN2109CT, RN2109FS, RN2109F, RN2109MFV, RN2109
