RN2108FS Datasheet. Specs and Replacement

Type Designator: RN2108FS  📄📄 

SMD Transistor Code: U7

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: FSM

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RN2108FS datasheet

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RN2108FS

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RN2108FS

RN2107MFV RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.8 0.05 enabling the ma... See More ⇒

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RN2101CT RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p... See More ⇒

Detailed specifications: RN2106, RN2107ACT, RN2107CT, RN2107FS, RN2107MFV, RN2107, RN2108ACT, RN2108CT, TIP2955, RN2108MFV, RN2108, RN2109ACT, RN2109CT, RN2109FS, RN2109F, RN2109MFV, RN2109

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