2N574
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N574
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 187
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 55
V
Tensión emisor-base (Veb): 28
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 100
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.075
MHz
Ganancia de corriente contínua (hfe): 9
Paquete / Cubierta:
TO61
Búsqueda de reemplazo de transistor bipolar 2N574
2N574
Datasheet (PDF)
0.1. Size:237K motorola
2n4398 2n4399 2n5745.pdf
Order this documentMOTOROLAby 2N4398/DSEMICONDUCTOR TECHNICAL DATA2N4347(See 2N3442)PNP Silicon High-PowerTransistors2N4398. . . designed for use in power amplifier and switching circuits. Low CollectorEmitter Saturation Voltage 2N4399IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,992N5745IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745
0.3. Size:11K semelab
2n5743.pdf
2N5743Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.4. Size:11K semelab
2n5741.pdf
2N5741Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
0.5. Size:164K jmnic
2n5745.pdf
JMnic Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and
0.6. Size:104K jmnic
2n5741 2n5742.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximu
0.7. Size:125K jmnic
2n5743 2n5744.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute ma
0.8. Size:191K inchange semiconductor
2n5744.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N5744DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
0.9. Size:117K inchange semiconductor
2n5741 2n5742.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximu
0.10. Size:184K inchange semiconductor
2n5743.pdf
isc Silicon PNP Power Transistor 2N5743DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
0.11. Size:121K inchange semiconductor
2n4398 2n4399 2n5745.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o
0.12. Size:125K inchange semiconductor
2n5743 2n5744.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 Collectorl Absolute
0.13. Size:51K inchange semiconductor
2n5740.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA
Otros transistores... 2N5732
, 2N5733
, 2N5734
, 2N5735
, 2N5736
, 2N5737
, 2N5738
, 2N5739
, 2N2222A
, 2N5740
, 2N5741
, 2N5742
, 2N5743
, 2N5744
, 2N5745
, 2N574A
, 2N575
.