Справочник транзисторов. 2N574

 

Биполярный транзистор 2N574 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N574
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 187 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 28 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 100 °C
   Граничная частота коэффициента передачи тока (ft): 0.075 MHz
   Статический коэффициент передачи тока (hfe): 9
   Корпус транзистора: TO61

 Аналоги (замена) для 2N574

 

 

2N574 Datasheet (PDF)

 0.1. Size:237K  motorola
2n4398 2n4399 2n5745.pdf

2N574
2N574

Order this documentMOTOROLAby 2N4398/DSEMICONDUCTOR TECHNICAL DATA2N4347(See 2N3442)PNP Silicon High-PowerTransistors2N4398. . . designed for use in power amplifier and switching circuits. Low CollectorEmitter Saturation Voltage 2N4399IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,992N5745IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745

 0.2. Size:158K  mospec
2n4398-99 2n5745.pdf

2N574
2N574

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 0.3. Size:11K  semelab
2n5743.pdf

2N574

2N5743Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.4. Size:11K  semelab
2n5741.pdf

2N574

2N5741Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.5. Size:164K  jmnic
2n5745.pdf

2N574
2N574

JMnic Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

 0.6. Size:104K  jmnic
2n5741 2n5742.pdf

2N574
2N574

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximu

 0.7. Size:125K  jmnic
2n5743 2n5744.pdf

2N574
2N574

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute ma

 0.8. Size:191K  inchange semiconductor
2n5744.pdf

2N574
2N574

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N5744DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.9. Size:117K  inchange semiconductor
2n5741 2n5742.pdf

2N574
2N574

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximu

 0.10. Size:184K  inchange semiconductor
2n5743.pdf

2N574
2N574

isc Silicon PNP Power Transistor 2N5743DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 0.11. Size:121K  inchange semiconductor
2n4398 2n4399 2n5745.pdf

2N574
2N574

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o

 0.12. Size:125K  inchange semiconductor
2n5743 2n5744.pdf

2N574
2N574

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 Collectorl Absolute

 0.13. Size:51K  inchange semiconductor
2n5740.pdf

2N574
2N574

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA

Другие транзисторы... 2N5732 , 2N5733 , 2N5734 , 2N5735 , 2N5736 , 2N5737 , 2N5738 , 2N5739 , TIP35C , 2N5740 , 2N5741 , 2N5742 , 2N5743 , 2N5744 , 2N5745 , 2N574A , 2N575 .

 

 
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