RN2118F Todos los transistores

 

RN2118F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2118F
   Código: XW_YW
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 4.7

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 25 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT490 SC81 ESM

 Búsqueda de reemplazo de transistor bipolar RN2118F

 

RN2118F Datasheet (PDF)

 ..1. Size:179K  toshiba
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RN2118F

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B

 0.1. Size:175K  toshiba
rn2114ft rn2118ft.pdf pdf_icon

RN2118F

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT

 8.1. Size:161K  toshiba
rn2114 rn2118.pdf pdf_icon

RN2118F

RN2114 RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resistor V

 8.2. Size:200K  toshiba
rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf pdf_icon

RN2118F

RN2114MFV RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit mm Switching Applications Inverter Circuit Applications 1.2 0.05 0.8 0.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis

Otros transistores... RN2116F , RN2116MFV , RN2116 , RN2117FT , RN2117F , RN2117MFV , RN2117 , RN2118FT , 13007 , RN2118MFV , RN2118 , RN2119MFV , RN2130MFV , RN2131MFV , RN2132MFV , RN2301 , RN2302 .

History: 2SD1658 | DBC846BPDW1T1G | DDTA114TKA | EQF0009 | BFW71 | BFV83 | 2SD1015

 

 
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