RN2118F Datasheet. Specs and Replacement

Type Designator: RN2118F  📄📄 

SMD Transistor Code: XW_YW

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 4.7

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT490 SC81 ESM

  📄📄 Copy 

 RN2118F Substitution

- BJT ⓘ Cross-Reference Search

 

RN2118F datasheet

 ..1. Size:179K  toshiba

 rn2114f rn2118f.pdf pdf_icon

RN2118F

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B... See More ⇒

 0.1. Size:175K  toshiba

 rn2114ft rn2118ft.pdf pdf_icon

RN2118F

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT... See More ⇒

 8.1. Size:161K  toshiba

 rn2114 rn2118.pdf pdf_icon

RN2118F

RN2114 RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resistor V... See More ⇒

 8.2. Size:200K  toshiba

 rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf pdf_icon

RN2118F

RN2114MFV RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit mm Switching Applications Inverter Circuit Applications 1.2 0.05 0.8 0.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis... See More ⇒

SHOW MORE

Detailed specifications: RN2116F, RN2116MFV, RN2116, RN2117FT, RN2117F, RN2117MFV, RN2117, RN2118FT, 13007, RN2118MFV, RN2118, RN2119MFV, RN2130MFV, RN2131MFV, RN2132MFV, RN2301, RN2302

Keywords - RN2118F pdf specs

 RN2118F cross reference

 RN2118F equivalent finder

 RN2118F pdf lookup

 RN2118F substitution

 RN2118F replacement