2N5781 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N5781
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO5

Búsqueda de reemplazo de transistor bipolar 2N5781

2N5781 Datasheet (PDF)

..1. Size:11K semelab
2n5781.pdf

2N5781Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

0.1. Size:10K semelab
2n5781xl.pdf

2N5781XLDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 80V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 ca

9.1. Size:317K rca
2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf

9.2. Size:57K njs
2n5780 2n5780 2n5777.pdf

9.3. Size:89K central
2n5783 2n5786.pdf

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9.4. Size:149K semelab
2n5786l.pdf

SILICON NPN TRANSISTOR 2N5786L Low Saturation Voltage. High Gain At High Current. Hermetic TO5 (TO-205AA) Metal Package. Ideally suited for General Purpose Amplifier Applications. High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 45V VCER RBE = 100 Collect

9.5. Size:10K semelab
2n5784smd.pdf

2N5784SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

9.6. Size:10K semelab
2n5785smd.pdf

2N5785SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

9.7. Size:11K semelab
2n5785.pdf

2N5785Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

9.8. Size:10K semelab
2n5782l.pdf

2N5782LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 65V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can

9.9. Size:18K semelab
2n5784.pdf

2N5784MECHANICAL DATADimensions in mm (inches)8.89 (0.35)9.40 (0.37)7.75 (0.305)SILICON EPITAXIAL8.51 (0.335)NPN TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.General purpose power transistor for8.51 (0.335)dia.switching and linear applications in ahermetic TO39 package.5.08 (0.200)typ.2.542(0.100)

9.10. Size:10K semelab
2n5785smd05.pdf

2N5785SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he

9.11. Size:340K semelab
2n5785n1.pdf

NPN SILICON SWITCHING TRANSISTOR 2N5785N1 Hermetic SMD0.5 Metal package. Ideally Suited for Linear Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 65V VCEO Collector Emitter Voltage 50V VEBO Emitter Base Voltage 5V IC Continuous Collecto

9.12. Size:10K semelab
2n5784smd05.pdf

2N5784SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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